Suppression of hot electron effect in AlGaN/GaN HEMT with multi-grooves barrier-etched structure

Abstract A multi-grooves barrier-etched structure between barrier layer and passivation is proposed in this paper to suppress the hot electron effect at gate edge on drain side p-GaN AlGaN/GaN high-electron-mobility transistor. In TCAD simulations, groove induces extra electric field concentration region AlGaN/SiN interface area, which can lower high peak temperature channel edge, leading alleviated capture release of electrons. The static I–V characteristic dynamic switching performance breakdown show that improves current collapse time voltage. Our work exhibits great potential stability reliability HEMT.